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Bulletin I27132 rev. H 10/02
IRK.71, .91 SERIES
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded
75 A 95 A
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV) @ 85C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It
2
IRK.71
75 165 1665 1740 13.86 12.56 138.6
IRK.91
95 210 1785 1870 15.91 14.52 159.1
Units
A A A A KA 2s KA2s KA 2s V
o
@ 50Hz @ 60Hz
I t V RRM range TSTG TJ
(*) As AC switch.
2
400 to 1600 - 40 to 125 - 40 to125
C C
o
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1
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04 06 08 IRK.71/ .91 10 12 14 16
VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V
400 600 800 1000 1200 1400 1600
IRRM IDRM 125C mA
V
500 700 900 1100 1300 1500 1700
V
400 600 800 1000 1200 1400 1600
15
On-state Conduction
Parameters
IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 165 1665 1740 1400 1470 1850 1940 I2 t Max. I2t for fusing 13.86 12.56 9.80 8.96 17.11 15.60 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/s 1.59 1.58 V 138.6 0.82 0.85 3.00 2.90 210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 m KA2s V KA2s or 75 95 180o conduction, half sine wave, TC = 85oC
IRK.71
IRK.91
Units
Conditions
I(RMS)
t=8.3ms reapplied
I(RMS)
Sinusoidal half wave, Initial TJ = TJ max.
t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t= 8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied Low level (3) High level (4) Low level High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ max (3) TJ = TJ max TJ = 25C Initial TJ = TJ max.
VT(TO) Max. value of threshold
TJ = 25oC, from 0.67 VDRM, ITM = x IT(AV), I = 500mA,
g
tr < 0.5 s, tp > 6 s TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x x IAV < I < x IAV
(1) I2t for time tx = I2t x tx (4) I > x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
2
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
Triggering
Parameters
PGM IGM Max. peak gate power
IRK.71
12 3.0 3.0 10 4.0 2.5 1.7 270 150 80
IRK.91
12 3.0 3.0
Units
W A
Conditions
PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative
V
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C
Anode supply = 6V resistive load Anode supply = 6V resistive load
mA
VGD IGD
0.25 6
V mA
TJ = 125oC, rated VDRM applied TJ = 125oC, rated VDRM applied
Blocking
Parameters
IRRM IDRM Max. peak reverse and off-state leakage current at VRRM, VDRM 2500 (1 min) VINS RMS isolation voltage 3500 (1 sec) 500 V/s V shorted TJ = 125oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 15 mA TJ = 125 oC, gate open circuit
IRK.71
IRK.91
Units
Conditions
dv/dt Max. critical rate of rise of off-state voltage (5)
(5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
TJ Tstg Junction operating temperature range Storage temp. range
IRK.71
IRK.91
Units
Conditions
- 40 to 125 C - 40 to 125
RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 0.1 5 Nm 3 110 (4) TO-240AA gr (oz) JEDEC 0.165 0.135 K/W Mounting surface flat, smooth and greased
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound
Per module, DC operation
R Conduction (per Junction)
Devices
IRK.71 IRK.91
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
180o 0.06 0.04 120o 0.07 0.05 90o 0.09 0.06 60o 0.12 0.08 30o 0.18 0.12 180o 0.04 0.03
Rect. wave conduction
120o 0.08 0.05 90o 0.10 0.06 60o 0.13 0.08 30o 0.18 0.12
Units
C/W
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3
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
Ordering Information Table
Device Code IRK.92 types With no auxiliary cathode
IRK
1 1 2 3 4 5 6 -
T
2
91
3
/
16
4
A
5
S90
6
Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs e.g. : IRKT92/16A etc. * * Available with no auxiliary cathode. To specify change: 71 to 72 91 to 92
Outline Table
Dimensions are in millimeters and [inches]
IRKT
(1) ~
IRKH
(1) ~
IRKL
(1) ~
IRKN
(1)
-
+ (2)
+ (2)
+ (2)
(2)
+
(3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5)
(3)
(3) K2 G2 (7) (6)
(3)
+
G1 K1 (4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 120 110 100 90 80 70
Conduction Angle
IRK.71.. Series R thJC (DC) = 0.33 K/W
130 120 110
IRK.71.. Series R thJC (DC) = 0.33 K/W
Conduction Period
100 90 30 80 70 60 90 120 60
30
60
90
120 180
180 80
DC 100 120
0
10
20
30
40
50
60
70
80
0
20
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 120 100 80 60 40 20 0 180 120 90 60 30 RMS Limit 140 120 100 80 60 40 20 0
Fig. 2 - Current Ratings Characteristics
DC 180 120 90 60 30 RMS Limit
Conduction Period
Conduction Angle
IRK.71.. Series Per Junction T J = 125C 0 10 20 30 40 50 60 70 80
IRK.71.. Series Per Junction T J = 125C 0 20 40 60 80 100 120
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A) 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 IRK.71.. Series Per Junction 10 100
Fig. 4 - On-state Power Loss Characteristics
1800 1600 1400 1200 1000 800
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRMReapplied
IRK.71.. Series Per Junction 0.1 Pulse Train Duration (s) 1
600 0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
250 Maximum Total On-state Power Loss (W) 180 120 90 60 30
SA R th
0. 2 W K/
3 0.
200
=
W K/
0. 4
0.
150
0. 5
0.7
K/ W
/W 1K
K/
ta el -D
W
K/ W
R
100
Conduction Angle
1K /W
1 .5
50
IRK.71.. Series Per Module T J = 125C 0 20 40 60
K/ W
3 K/W
0
0 80 100 120 140 160 180
20
40
60
80
100
120
140
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 7 - On-state Power Loss Characteristics
600 Maximum Total Power Loss (W) 500 400 300 200 100 0 2 x IRK.71.. Series Single Phase Bridge Connected T J = 125C 0 20 40 60
180 (Sine) 180 (Rect)
h Rt
SA
= 1 0. W K/
0. 2
0. 3
-D
K/
W
lta e R
K/ W
0.5 K
1 K/
/W
W
2 K/ W
80 100 120 140 160 180 0
20
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 8 - On-state Power Loss Characteristics
800 Maximum Total Power Loss (W) 700 600 500 400 300 200 100 0 0 40 80 3 x IRK.71.. Series Three Phase Bridge Connected T J = 125C 120 160 200 120 (Rect)
0.2
R
SA th
=
0. 1
K/ W
K/ W
-D el
ta
0.3
R
K/ W
0 .5
K/W
1 K/W
0 240
20
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
Maximum Allowable Case Temperature (C) IRK.91.. Series R thJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (C) 130 120 110
Conduction Angle
130 120 110
IRK.91.. Series R thJC (DC) = 0.27 K/W
Conduction Period
100 90 80 70
100 90 80 70
30
60 90 120 180 100
30
60 90 120 DC
180
0
20
40
60
80
0
20
40
60
80
100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 140 120 100 80 60 40 20 0
Conduction Angle
Fig. 11 - Current Ratings Characteristics
180 160 140 120 100 80 60 40 20 0 0 20 40 60 80
Conduction Period
180 120 90 60 30 RMS Limit
DC 180 120 90 60 30 RMS Limit
IRK.91.. Series Per Junction T J = 125C 0 20 40 60 80 100
IRK.91.. Series Per Junction T J = 125C 100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
1600 1500 1400 1300 1200 1100 1000 900 800 700 1 IRK.91.. Series Per Junction 10 100 1800 1600 1400 1200 1000 800
Fig. 13 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125C No Voltage Reapplied Rated VRRM Reapplied
IRK.91.. Series Per Junction 0.1 Pulse Train Duration (s) 1
600 0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
350 Maximum Total On-state Power Loss (W)
R th
300
250 200
180 120 90 60 30
0. 2
SA
0.
K/ W
= 1 0.
3
W K/
K/ W
K/ W
a elt -D
0.5
R
150
100 50 0
Conduction Angle
0.7
K/ W
IRK.91.. Series Per Module T J = 125C 0 40 80 120 160 200
1K /W 1.5 K /W
3 K/W
0 240
20
40
60
80
100
120
140
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 16 - On-state Power Loss Characteristics
600 Maximum Total Power Loss (W) 500 400 300 200 100 0 2 x IRK.91.. Series Single Phase Bridge Connected T J = 125C 0 40 80 120 160
180 (Sine) 180 (Rect)
h Rt
SA
= 1 0.
0. 2
W K/
K/ W
-D ta el
0.3
R
K/ W
0 .5
K/ W
1 K/ W
2 K/ W
200 0
20
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 17 - On-state Power Loss Characteristics
900 Maximum Total Power Loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 3 x IRK.91.. Series Three Phase Bridge Connected T J = 125C 160 200 240 120 (Rect)
R
SA th
=
0. 1
K/ W
0.2 K/ W
-D
el ta
R
0.3
K/ W
0.5 K
/W
1 K/W
280 0
20
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 18 - On-state Power Loss Characteristics
8
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A) 1000
100
100 T J= 25C 10 T J= 125C IRK.91.. Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5
T J= 25C 10 T J= 125C IRK.71.. Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Recovery Current - Irr (A) 700 600 500
50 A
Fig. 20 - On-state Voltage Drop Characteristics
140 120 100 80 60 40 20 10 IRK.71.. Series IRK.91.. Series T J = 125 C
I TM = 200 A 100 A 50 A 20 A 10 A
IRK.71.. Series IRK.91.. Series T J = 125 C
I TM = 200 A 100 A
400 300 200 100 10
20 A 10 A
20
30
40
50
60
70
80
90 100
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Rate Of Fall Of Forward Current - di/dt (A/s)
Fig. 21 - Recovery Charge Characteristics
Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value: R thJC = 0.33 K/W R thJC = 0.27 K/W (DC Operation) 0.1 IRK.71.. Series IRK.91.. Series
Fig. 22 - Recovery Current Characteristics
Per Junction
0.01 0.001
0.01
0.1 Square Wave Pulse Duration (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms 10 tr = 1 s, tp >= 6 s
(1) PGM = 200 W, tp = 300 s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a)
TJ = -40 C
(b)
TJ = 25 C TJ = 125 C
1 VGD
IGD
(4)
(3) (2)
(1)
0.1 0.001
IRK.71../.91.. Series Frequency Limited by PG(AV) 0.1 1 10 100 1000
0.01
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02
10
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